Changes in electronic and adsorption properties under Cs adsorption on GaAs (1 0 0) in the transition from As-rich to Ga-rich surface

Surface Science

Volumn 523, Issue 3, 2003, Pages 211-217

  Benemanskaya, G V ^a   Daineka, D V ^a   Frank Kamenetskaya, G E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Adsorption kinetics; Alkali metals; Gallium arsenide; Photoemission (total yield); Sticking

Indexed keywords

ADSORPTION; ARSENIC; CESIUM; IONIZATION; PHOTOEMISSION;

IONIZATION ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037454643     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02357-9     Document Type: Article

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