Growth of AlGaN epitaxial film with high Al content by metalorganic chemical vapour deposition

Chinese Physics Letters

Volumn 24, Issue 3, 2007, Pages 774-777

  Wang, Xiao Lan ^a   Zhao, De Gang ^a   Yang, Hui ^a   Liang, Jun Wu ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; EPILAYERS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR ALLOYS; SURFACE ROUGHNESS; TEMPERATURE;

ALGAN EPILAYERS; ALN BUFFER; CONDITION; CRYSTAL QUALITIES; FLOW RATIOS; HIGH AL CONTENT; LOW PRESSURES; LOWS-TEMPERATURES; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MOSAICITY;

III-V SEMICONDUCTORS;

EID: 34247266045     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/3/051     Document Type: Article

References (16)

1. Zhang J P et al 2002 Appl. Phys. Lett. 81 4910
2. Yasan A et al 2002 Appl. Phys. Lett. 81 801
3. Adivarahan V et al 2002 Appl. Phys. Lett. 81 3666
4. Zhou S Q, Wu M F and Yao S D 2005 Chin. Phys. Lett. 22 3189
5. Yoshida S, Misawa S and Gonda S 1982 J. Appl. Phys. 53 6844
6. Koide Y et al 1987 J. Appl. Phys. 61 4540
7. Ito K, Hiramatsu K, Amano H and Akasaki I 1990 J. Crystal Growth 104 533
8. Amano H et al 1999 Phys. Status Solidi B 216 683
9. Zhou Y G et al 2000 Mater. Lett. 45 331
10. Wang B Z et al 2006 Chin. Phys. Lett. 23 2187
11. Kondratyev A V et al 2004 J. Crystal Growth 272 420
12. Zhao D G et al 2004 Appl. Phys. Lett. 85 1499
13. Ohba Y and Sato R 2000 J. Crystal Growth 221 258
14. Kim S et al 2004 J. Crystal Growth 262 7
15. Zhao D G et al 2006 J. Crystal Growth 289 72
16. Coltrin M E, Creighton J R and Mitchell C C 2006 J. Crystal Growth 287 566