Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices

Chinese Physics Letters

Volumn 23, Issue 8, 2006, Pages 2187-2189

  Wang, Bao Zhu ^a   Wang, Xiao Liang ^a   Hu, Guo Xin ^a   Ran, Jun Xue ^a   Wang, Xin Hua ^a   Guo, Lun Chun ^a   Xiao, Hong Ling ^a   Li, Jian Ping ^a   Zeng, Yi Ping ^a   Li, Jin Min ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM ALLOYS; HOLE CONCENTRATION; III-V SEMICONDUCTORS; MAGNESIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTOR ALLOYS; X RAY DIFFRACTION;

ANNEALED SAMPLES; ANNEALING TREATMENTS; AS-GROWN; HALL MEASUREMENTS; HIGH RESOLUTION XRAY DIFFRACTION (XRD); METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; MG DOPED ALGAN; PIEZO-ELECTRIC FIELDS; THERMAL ANNEALING TREATMENT; X-RAY DIFFRACTION MEASUREMENTS;

GALLIUM NITRIDE;

EID: 33746467507     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/8/062     Document Type: Article

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