Gas-phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN

Materials Letters

Volumn 45, Issue 6, 2000, Pages 331-335

  Zhou, Y G ^a   Zhang, R ^a   Li, W P ^a   Shen, B ^a   Chen, P ^a   Chen, Z Z ^a   Gu, S L ^a   Shi, Y ^a   Zheng, Y D ^a   Huang, Z C ^b  

^a NANJING UNIVERSITY   (China)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; LIGHT RADIATION HEATING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034299792     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(00)00128-2     Document Type: Article

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