Determination of Al composition in strained AlGaN layers

Chinese Physics Letters

Volumn 22, Issue 12, 2005, Pages 3189-3191

  Zhou, Sheng Qiang ^a   Wu, Ming Fang ^a   Yao, Shu De ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM NITRIDE; GALLIUM ALLOYS; III-V SEMICONDUCTORS; LATTICE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR ALLOYS; TENSILE STRAIN;

AL COMPOSITION; ALGAN LAYERS; C-SAPPHIRE; COMPOSITION DETERMINATION; LARGE DEVIATIONS; LINEAR RELATIONSHIPS; TETRAGONAL DISTORTION; VEGARD'S LAW;

X RAY DIFFRACTION;

EID: 28744447611     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/22/12/058     Document Type: Article

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