Integration of HCl chemical vapour etching and SiGe:B selective epitaxy for source/drain application in MOSFETs

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Hallstedt J ^a   Ghandi, R ^a   Kolahdouz, M ^a   Ostling M ^a   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); EPITAXIAL GROWTH; ETCHING; PARTIAL PRESSURE; SEMICONDUCTING SILICON;

CHEMICAL VAPOUR ETCHING; DOPED SIGE LAYERS; EPITAXIAL QUALITY;

HYDROCHLORIC ACID;

EID: 34247228033     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S29     Document Type: Article

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