High quality SiGe epitaxial layer grown by RPCVD using Dichlorosilane

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 201-204

  Menon, C ^a   Radamson, H H ^a   Landgren, G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH RATE; MICROSYSTEMS; PARTIAL PRESSURE; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES;

DENSITY OF DISLOCATION; EPITAXIAL QUALITY; HIGH PARTIAL PRESSURE; LOW GROWTH RATE; LOW PARTIAL PRESSURES; PATTERNED SUBSTRATES; RECIPROCAL LATTICE MAPPING; SINGLE-CRYSTALLINE;

DEFECT DENSITY;

EID: 84952014451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889480     Document Type: Conference Paper

References (6)

1. J.V. Grahn, H. Fosshaug, M. Jargelius, P. Jönsson, M. Linder, B.G. Malm, B. Mohadjeri, J. Pejnefors, H.H. Radamson, M.Sanden, Y.B. Wang, G. Landgren and M. Ösling, Solid-State Electronics, vol. 44, pp. 549, 2000.
2. W.B. de Boer, D. Terpstra, Van Berkuum J.G.M, Mat. Sci., vol. B67, pp.46 (1999).
3. S. Ito, T.Nakamura and S. Nishikawa, J. Appl. Phys, 78, 2716. (1995).
4. P.F. Fewster and N. L. Andrew, J. Appl. Phys, 74, 3121 (1993).
5. H.H. Radamson, W. -X. Ni, G.V. Hansson, Applied-Surface-Science 102, 82 (1996).
6. C. Menon, H.H. Radamson and G. Landgren, (to be published).