Magnetoresistance mobility extraction on TiN/HfO2/SiO 2 metal-oxide-semiconductor field effect transistors

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Thevenod, L ^a   Casse M ^a   Desrat, W ^b   Mouis, M ^c   Reimbold, G ^a   Maude, D K ^b   Boulanger, F ^a  

^a CEA LETI   (France)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; GATE DIELECTRICS; HAFNIUM; MAGNETORESISTANCE; SILICA;

COULOMB SCATTERING; MOBILITY DEGRADATION; MOBILITY EXTRACTION;

MOSFET DEVICES;

EID: 34247222156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721363     Document Type: Article

References (17)

1. H. Wong and H. Iwai, Microelectron. Eng. 83, 1867 (2006).
2. G. Bersuker, P. Zeitzoff, G. Brown, and H. R. Huff, Mater. Today 7, 26 (2004).
3. J. Robertson, Rep. Prog. Phys. 69, 327 (2005).
4. W. Zhu, J.-P. Han, and T. P. Ma, IEEE Trans. Electron Devices 51, 98 (2004).
5. M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, J. Appl. Phys. 90, 4587 (2001).
6. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, IEEE Electron Device Lett. 25, 408 (2004).
7. S. Datta, G. Dewey, M. Doczy, B. S. Doyle, B. Jin, J. Kavalieros, R. Kotlyar, M. Metz, N. Zelick, and R. Chau, Tech. Dig. - Int. Electron Devices Meet. 2003, 653.
8. S. I. Saito, K. Torii, M. Hiratani, and T. Onai, Appl. Phys. Lett. 81, 2391 (2002).
9. M. Cassé, L. Thevenod, B. Guillaumot, L. Tosti, F. Martin, J. Mitard, O. Weber, F. Andrieu, T. Ernst, G. Reimbold, T. Billon, M. Mouis, and F. Boulanger, IEEE Trans. Electron Devices 53, 759 (2006).
10. Y. Meziani, J. Lusakowski, W. Knap, N. Dyakonova, F. Teppe, K. Romanjek, M. Ferrier, R. Clerc, G. Ghibaudo, F. Boeuf, and T. Skotnicki, J. Appl. Phys. 96, 5761 (2004).
11. W. Chaisantikulwat, M. Mouis, G. Ghibaudo, C. Gallon, C. Fenouillet-Beranger, D. K. Maude, T. Skotnicki, and S. Cristoloveanu, Proceedings of ESSDERC, 2005 (unpublished), p. 569.
12. W. Chaisantikulwat, M. Mouis, G. Ghibaudo, C. Gallon, C. Fenouillet-Beranger, D. K. Maude, T. Skotnicki, and S. Cristoloveanu, Solid-State Electron. 50, 637 (2006).
13. B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel, J. Chroboczek, P. Masson, R. Truche, A. Papon, F. Martin, J. Damlencourt, S. Maitrejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J. Autran, T. Skotnicki, and S. Deleonibus, Tech. Dig. - Int. Electron Devices Meet. 2002, 355.
14. D. S. Jeon and D. E. Burk, IEEE Trans. Electron Devices 36, 1456 (1989).
15. S. I. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
16. M. V. Fischetti, J. Comput. Electron. 2, 73 (2003).
17. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).