Analytical model of the programming characteristics of scaled MONOS memories with a variety of trap densities and a proposal of a trap-density-modulated MONS memory

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 301-304

  Nomoto, K ^a   Fujiwara, I ^a   Aozasa, H ^a   Terano, T ^a   Kobayashi, T ^a  

^a Sony Corporation Semiconductor Network Company   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; STOICHIOMETRY;

MASS FLOW RATIO; METAL OXIDE NITRIDE OXIDE SEMICONDUCTOR;

SEMICONDUCTOR STORAGE;

EID: 0035714326     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)