Triple high κ stacks (Al2O3/HfO 2/Al2O3) with high pressure (10atm) H 2 and D2 annealing for SONOS type flash memory device applications

2004 4th IEEE Conference on Nanotechnology

Volumn , Issue , 2004, Pages 53-55

  Jeon, Sanghun ^a   Choi, Sangmoo ^a   Park, Hokyung ^a   Hwang, Hyunsang ^a   Han, Jung Hee ^a   Chae, Hisun ^a   Chae, Soo Doo ^a   Kim, Ju Hyung ^a   Kim, Moon Kyung ^a   Jeong, Youn Seok ^a   Park, Yoondong ^a   Seo, Sunare ^a   Lee, Jo Won ^a   Kim, Chung Woo ^a  

^a NONE

Author keywords

Flash memory; High k; High pressure; Reliability; SONOS

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; FLASH MEMORY; MOS CAPACITORS; NONVOLATILE STORAGE; RELIABILITY; SILICA;

FORMING GAS ANNEALING (FGA); HIGH K; HIGH PRESSURE; SONOS;

ALUMINUM COMPOUNDS;

EID: 20344385057     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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