Hf-silicate Inter-Poly Dielectric technology for sub 70nm body tied FinFET flash memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 208-209

  Cho, Eun Suk ^a   Lee, Choong Ho ^a   Kim, Tae Yong ^a   Sung, Suk Kang ^a   Cho, Byung Kyu ^a   Lee, Chul ^a   Cho, Hye Jin ^a   Roh, Yonghan ^c   Park, Donggun ^a   Kim, Kinam ^b   Ryu, Byung Il ^a  

^a Device Research Team   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c The Department of Electrical and Computer Engineering   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING; DIELECTRIC MATERIALS; DURABILITY; ELECTRIC POTENTIAL; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS;

CHANNEL HOT ELECTRON INJECTION (CHEI); F-N TUNNELING; FINFET FLASH MEMORY; HOT HOLE INJECTION (HHI);

FLASH MEMORY;

EID: 33745167324     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E. S. Cho, et al., ESSDERC., p289, 2004.
2. International Technology Roadmap for Semiconductors, p25, 2003.
3. G.D.Wilk, et al., J.Appl.Phys., 87, p484, 2000.
4. Masato Koyama, et al., IEDM Tech. Dig., p849, 2002.
5. A.L.P Rotondaro, et al., Symp. On VLSI Tech., 148, 2002