An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO2 gate dielectrics

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 548-551

  Chiu, Fu Chien ^a   Shih, Wen Chieh ^b   Lee, Joseph Ya min ^b   Hwang, Huey Liang ^b  

^a MING CHUAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICA;

DEPLETION REGIONS; GATE OXIDES; SUBTHRESHOLD SWING MEASUREMENT; SURFACE STATES;

MOSFET DEVICES;

EID: 34247136327     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.009     Document Type: Article

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