Thickness dependence of the time dependent dielectric breakdown characteristics of Pb(Zr, Ti)O3 thin film capacitors for memory device applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3488-3491

  Kundu, T K ^a,b   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Dielectric breakdown; Ferroelectric; Leakage current; Memory device; PZT thin films

Indexed keywords

DATA STORAGE EQUIPMENT; DIELECTRIC FILMS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; FERROELECTRIC DEVICES; LEAD COMPOUNDS; LEAKAGE CURRENTS; THIN FILM DEVICES;

DIELECTRIC BREAKDOWN; LEAD ZIRCONATE TITANATE; THIN FILM CAPACITORS;

CERAMIC CAPACITORS;

EID: 0034205723     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3488     Document Type: Article

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