Effect of GaN doping on ZnO films by pulsed laser deposition

Materials Letters

Volumn 61, Issue 11-12, 2007, Pages 2307-2310

  Gopalakrishnan, N ^a   Shin, B C ^b   Lim, H S ^b   Balasubramanian, T ^a   Yu, Y S ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b Dong Eui University   (South Korea)

Author keywords

Ga N codoping; GaN; Pulsed laser deposition; ZnO

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLIZATION; OXIDE FILMS; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; X RAY DIFFRACTION; ZINC OXIDE;

DEEP LEVEL EMISSIONS; DONOR DEFECTS; NEAR BAND EDGES (NBE);

GALLIUM NITRIDE;

EID: 34147153183     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.08.075     Document Type: Article

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