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Volumn 233, Issue 3, 2001, Pages 431-438

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

Author keywords

A3. molecular beam epitaxy; B1. nitrides; B2. semiconducting III V materials

Indexed keywords

LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; THICKNESS MEASUREMENT;

EID: 0035546569     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01592-5     Document Type: Article
Times cited : (17)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.