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Volumn 233, Issue 3, 2001, Pages 431-438
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High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer
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Author keywords
A3. molecular beam epitaxy; B1. nitrides; B2. semiconducting III V materials
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Indexed keywords
LOW TEMPERATURE EFFECTS;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTING GALLIUM COMPOUNDS;
STRAIN;
THICKNESS MEASUREMENT;
INTERMEDIATE-TEMPERATURE BUFFER LAYERS (ITBL);
THIN FILMS;
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EID: 0035546569
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01592-5 Document Type: Article |
Times cited : (17)
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References (20)
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