MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 815-818

  Kociniewski, T ^a   Pinault, M A ^a   Barjon, J ^a   Jomard, F ^a   Chevallier, J ^a   Saguy, C ^b  

^a LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Electrical measurements; Growth temperature; MOCVD; n type doping

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; GROWTH TEMPERATURE; PHOSPHORUS; SEMICONDUCTOR DOPING; TOXICITY;

ELECTRICAL MEASUREMENTS; N-TYPE DOPING; TERTIARYBUTYLPHOSPHINE (TBP);

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 34047274776     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.12.032     Document Type: Article

References (17)

1. Koizumi S., Watanabe K., Hasegawa M., and Kanda H. Science 292 (2001) 1899
2. Matsudaira H., Miyamoto S., Ishizaka H., Umezawa H., and Kawarada H. IEEE Electron Device Lett. 25 (2004) 480
3. Nishibayashi Y., Saito H., Imai T., and Fujimori N. Diamond Relat. Mater. 9 (2000) 290
4. Koizumi S., Kamo M., Sato Y., Ozaki H., and Inuzuka T. Appl. Phys. Lett. 71 (1997) 1065
5. Koizumi S., Kamo M., Sato Y., Ozaki H., and Inuzuka T. Diamond Relat. Mater. 7 (1998) 540
6. Haenen K., Meykens K., Nesladek M., Stals L.M., Teraji T., Koizumi S., and Gheeraert E. Phys. Status Solidi, A Appl. Res. 174 (1999) 53
7. Koizumi S., Teraji T., and Kanda H. Diamond Relat. Mater. 9 (2000) 935
8. Hayashi K., Yamanaka S., Watanabe H., Sekiguchi T., Okushi H., and Kajimura K. J. Cryst. Growth 183 (1998) 338
9. Katagiri M., Isoya J., Koizumi S., and Kanda H. Appl. Phys. Lett. 85 (2004) 6365
10. Kato H., Futako W., Yamasakia S., and Okushia H. Diamond Relat. Mater. 14 (2005) 340
11. Kato H., Yamasaki S., and Okushi H. Phys. Status Solidi, A Appl. Res. 202 (2005) 2122
12. Kociniewski T., Barjon J., Pinault M.-A., Jomard F., Lusson A., Ballutaud D., Gorochov O., Laroche J.M., Rzepka E., Chevallier J., and Saguy C. Phys. Status Solidi, A Appl. Res. 203 (2004) 3136
13. Blakemore J.S. Semiconductor Statistics (1962), Pergamon, Oxford, UK
14. Pernot J., Tavares C., Gheeraert E., Bustarret E., Katagiri M., and Koizumi S. Appl. Phys. Lett. 89 (2006) 122111
15. Bardeen J., and Schockley W. Phys. Rev. 80 (1950) 72
16. Sauer R., Teofilov N., Thonke K., and Koizumi S. Phys. Status Solidi, A Appl. Res. 201 (2004) 2405
17. Takeuchi D., Watanabe H., Yamanaka S., Okushi H., Sawada H., Ichinose H., Sekiguchi T., and Kajimura K. Phys. Rev., B 63 (2001) 245328