Over 20-GHz cutoff frequency submicrometer-gate diamond MISFETs

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 480-482

  Matsudaira, Hiroki ^a,b   Miyamoto, Shingo ^a,b   Ishizaka, Hiroaki ^a,b   Umezawa, Hitoshi ^a,b   Kawarada, Hiroshi ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CIRCUIT OSCILLATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HOLE MOBILITY; SEMICONDUCTING DIAMONDS; TRANSCONDUCTANCE; VELOCITY MEASUREMENT; VOLTAGE MEASUREMENT;

CUTOFF FREQUENCY; HYDROGEN TERMINATED SURFACE; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; SATURATION VELOCITY;

MISFET DEVICES;

EID: 3342957444     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831200     Document Type: Article

References (10)

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