Homoepitaxial growth on fine columns of single crystal diamond for a field emitter

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 290-294

  Nishibayashi, Yoshiki ^a   Saito, Hirohisa ^b   Imai, Takahiro ^b   Fujimori, Naoji ^b  

^a OSAKA UNIVERSITY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ELECTRIC CURRENTS; ELECTRON EMISSION; EPITAXIAL GROWTH; ETCHING; METHANE; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS;

HOMOEPITAXIAL GROWTH;

DIAMONDS;

EID: 0033728740     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00210-7     Document Type: Article

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