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Volumn 22, Issue 4, 2007, Pages 374-379

Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality

Author keywords

[No Author keywords available]

Indexed keywords

BEAM QUALITY; EMBEDDED SYSTEMS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRAIN; WAVEGUIDES;

EID: 34047204607     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/013     Document Type: Article
Times cited : (5)

References (14)
  • 1
    • 0035846007 scopus 로고    scopus 로고
    • 2W reliable operation in 50νm-wide InGaAsP/InGaP/AlGaAs (λ ≤ 810 nm) SQW diode lasers with tensile-strained InGaP barriers
    • Yamanaka F, Wada M, Kuniyasu T, Ohgoh T, Fukunaga T and Hayakawa T 2001 2W reliable operation in 50νm-wide InGaAsP/InGaP/AlGaAs (λ ≤ 810 nm) SQW diode lasers with tensile-strained InGaP barriers Electron. Lett. 37 1289-90
    • (2001) Electron. Lett. , vol.37 , Issue.21 , pp. 1289-1290
    • Yamanaka, F.1    Wada, M.2    Kuniyasu, T.3    Ohgoh, T.4    Fukunaga, T.5    Hayakawa, T.6
  • 2
    • 1442288559 scopus 로고    scopus 로고
    • High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm
    • Qu Y, Yuan S, Liu C Y, Bo B, Liu G and Jiang H 2004 High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm IEEE Photon. Technol. Lett. 16 389-91
    • (2004) IEEE Photon. Technol. Lett. , vol.16 , Issue.2 , pp. 389-391
    • Qu, Y.1    Yuan, S.2    Liu, C.Y.3    Bo, B.4    Liu, G.5    Jiang, H.6
  • 3
    • 0032663376 scopus 로고    scopus 로고
    • Aluminium-free active area laser bars at 790 nm-830 nm wavelengths
    • Asonen H et al 1999 Aluminium-free active area laser bars at 790 nm-830 nm wavelengths Proc. SPIE 3628 11-8
    • (1999) Proc. SPIE , vol.3628 , pp. 11-18
    • Asonen, H.1    Al, E.2
  • 6
    • 0035263985 scopus 로고    scopus 로고
    • High power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
    • Sebastian J et al 2001 High power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence IEEE J. Sel. Top. Quantum Electron 7 334-39
    • (2001) IEEE J. Sel. Top. Quantum Electron , vol.7 , Issue.2 , pp. 334-339
    • Sebastian, J.1    Al, E.2
  • 7
    • 0030172191 scopus 로고    scopus 로고
    • Semiconductor amplifiers and lasers with tapered gain regions
    • Walpole J N 1996 Semiconductor amplifiers and lasers with tapered gain regions Opt. Quantum Electron. 28 623-45
    • (1996) Opt. Quantum Electron. , vol.28 , Issue.6 , pp. 623-645
    • Walpole, J.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.