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Volumn 16, Issue 4, 2004, Pages 984-986

Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm

Author keywords

High brightness diode lasers; Tapered lasers; Tensile strained GaAsP quantum wells

Indexed keywords

CONTINUOUS WAVE LASERS; GUIDED ELECTROMAGNETIC WAVE PROPAGATION; RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TENSILE STRENGTH;

EID: 1942532796     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.824949     Document Type: Article
Times cited : (11)

References (10)
  • 4
    • 0030172191 scopus 로고    scopus 로고
    • Semiconductor amplifiers and lasers with tapered gain regions
    • J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron., vol. 28, pp. 623-645, 1996.
    • (1996) Opt. Quantum Electron. , vol.28 , pp. 623-645
    • Walpole, J.N.1
  • 10
    • 0141456359 scopus 로고    scopus 로고
    • 3 W - High brightness tapered diode lasers at 735 nm based on tensile strained GaAsP-QWs
    • Novel In-Plane Semiconductor Lasers II, C. F. Gmachl and D. P. Bour, Eds., Bellingham, WA
    • G. Erbert, J. Fricke, R. Hülsewede, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, B. Sumpf, H. Wenzel, and G. Tränkle, "3 W - high brightness tapered diode lasers at 735 nm based on tensile strained GaAsP-QWs," in Proc. SPIE vol. 4995, Novel In-Plane Semiconductor Lasers II, C. F. Gmachl and D. P. Bour, Eds., Bellingham, WA, 2003, pp. 29-38.
    • (2003) Proc. SPIE , vol.4995 , pp. 29-38
    • Erbert, G.1    Fricke, J.2    Hülsewede, R.3    Knauer, A.4    Pittroff, W.5    Ressel, P.6    Sebastian, J.7    Sumpf, B.8    Wenzel, H.9    Tränkle, G.10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.