High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2 = 1.9 at P = 4.4 W

IEEE Photonics Technology Letters

Volumn 18, Issue 4, 2006, Pages 601-603

  Dittmar, F ^a   Sumpf, B ^a   Fricke, J ^a   Erbert, G ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

808 nm; Beam quality; High brightness; High power; Semiconductor lasers; Tapered lasers

Indexed keywords

DIFFRACTION; HIGH POWER LASERS; LASER BEAMS; SEMICONDUCTOR DEVICE MANUFACTURE; SOLID STATE LASERS;

BEAM QUALITY; HIGH BRIGHTNESS; TAPERED DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 32044441649     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.870152     Document Type: Article

References (9)

1. J. Sebastian, G. Beister, F. Bugge, F. Buhrandt, G. Erbert, H. G. Hänsel, R. Hülsewede, A. Knauer, W. Pittroff, R. Staske, M. Schröder, H. Wenzel, M. Weyers, and G. Tränkle, "High power 810-nm GaAsP-Al-GaAs diode lasers with narrow beam divergence," IEEE J. Sel. Topics Quantum Electron., vol. 7, no. 2, pp. 334-339, Mar./Apr. 2001.
2. J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron., vol. 28, pp. 623-645, 1996.
3. G. Erbert, J. Fricke, R. Hülsewede, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, B. Sumpf, H. Wenzel, and G. Tränkle, "3 W-high brightness tapered diode lasers at 735 nm based on tensile strained GaAsP-QWs," Proc. SPIE, vol. 4995, pp. 29-38, 2003.
4. H. Wenzel, G. Erbert, and B. Sumpf, "High-brightness diode lasers," Comptes Rendus Physique, vol. 4, pp. 649-661, 2003.
5. M. T. Kelemen, R. Kiefer, M. Mikulla, F. Rinner, J. Rogg, M. Walter, N. Wiedmann, and G. Weimann, "High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm," Proc. SPIE, vol. 4648, pp. 75-81, 2002.
6. M. T. Kelemen, M. Mikulla, F. Rinner, J. Rogg, J. Weber, and G. Weimann, "High-brightness 1040 nm tapered diode laser," Proc. SPIE, vol. 4947, pp. 252-260, 2003.
7. J. P. Donnelly, R. J. Bailey, S. H. Groves, L. J. Missaggia, A. Napoleone, R. E. Reeder, J. N. Walpole, and C. C. Cook, "1.5-μm tapered-gain-region lasers with high-CW output powers," IEEE Photon. Technol. Lett., vol. 10, no. 10, pp. 1377-1379, Oct. 1998.
8. M. T. Kelemen, S. Kallenbach, M. Mikulla, C. Pfahler, J. Weber, and G. Weimann, "Astigmatism and beam quality of high-brightness tapered diode lasers," Proc. SPIE, vol. 5452, pp. 233-243, 2004.
9. S. Sujecki, L. Borruel, J. Wykes, P. Moreno, B. Sumpf, P. Sewell, H. Wenzel, T. M. Benson, G. Erbert, I. Esquivias, and E. C. Larkins, "Non-linear properties of tapered laser cavities," IEEE J. Sel. Topics Quantum Electron., vol. 9, no. 3, pp. 823-834, May/Jun. 2003.