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Volumn 4648, Issue , 2002, Pages 75-81

High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm

Author keywords

AlGaAs InGaAs; High brightness; High power; Laser diodes; Lifetime; Semiconductor; Tapered laser diode

Indexed keywords

CURRENT DENSITY; FIBER LASERS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036029464     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.462644     Document Type: Conference Paper
Times cited : (31)

References (16)
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  • 3
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    • High-power, near-diffraction limited large area traveling - Wave semiconductor amplifiers
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  • 9
    • 0032223958 scopus 로고    scopus 로고
    • Improved beam quality for high power tapered laser diodes with LMG (Low Modal Gain)-epitaxial layer structures
    • In-Plane Semiconductor lasers: From Ultraviolet to Mid-Infrared
    • M. Mikulla, A. Schmitt, P. Chazan, A. Wetzel, G. Bihlmann, R. Kiefer, R. Moritz, J. Braunstein, and G. Weimann, "Improved Beam Quality for High Power Tapered Laser Diodes with LMG (Low Modal Gain)-Epitaxial Layer Structures", SPIE Proc., Vol. 3284, In-Plane Semiconductor lasers: from Ultraviolet to Mid-Infrared, pp. 72-79, 1998.
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    • Mikulla, M.1    Schmitt, A.2    Chazan, P.3    Wetzel, A.4    Bihlmann, G.5    Kiefer, R.6    Moritz, R.7    Braunstein, J.8    Weimann, G.9
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    • High-power 980 nm laser diodes by MBE
    • Optoelectronics, Materials, and Devices for Communications
    • M. Mikulla, M.T. Kelemen, M. Walther, R. Kiefer, R. Moritz, and G. Weimann, "High-power 980 nm laser diodes by MBE," SPIE Proc., Vol. 4580, Optoelectronics, Materials, and Devices for Communications, 11-18, 2001.
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    • Mikulla, M.1    Kelemen, M.T.2    Walther, M.3    Kiefer, R.4    Moritz, R.5    Weimann, G.6
  • 13
    • 0001471602 scopus 로고    scopus 로고
    • Tapered high-power, high-brightness diode lasers: Design and performance
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    • Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
    • Photonics West, San Jose, California, USA, 2002, to be submitted
    • F. Rinner, J. Rogg, N. Wiedmann, H. Konstanzer, M. Dammann, M. Mikulla, R. Poprawe, and G. Weimann, "Carrier Density Dependence of the Lifetime of InGaAs/AlGaAs High Power Lasers", SPIE Proc., Vol. 4648, Photonics West 2002, San Jose, California, USA, 2002, to be submitted.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.