High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 334-339

  Sebastian, Jürgen ^b   Beister, Gert ^b   Bugge, Frank ^b   Buhrandt, F ^c   Erbert, Goetz ^a,b   Hansel H G ^c   Hülsewede, Ralf ^b   Knauer, Arne ^b   Pittroff, Wolfgang ^a,b   Staske, Ralf ^b   Schroder M ^c   Wenzel, Hans ^b   Weyers, Markus ^b   Tränkle, Günther ^a,b  

^a IEEE

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c JENOPTIK Laserdiode GmbH   (Germany)

Author keywords

AlGaAs; GaAsP; High power laser diodes (LDs); Quantum wells (QWs); Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH POWER LASERS; OPTICAL DESIGN; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

ALUMINUM GALLIUM ARSENIDE DIODE LASERS; GALLIUM ARSENIDE PHOSPHIDE DIODE LASERS; LARGE OPTICAL CAVITY; NARROW BEAM DIVERGENCE; POWER-CURRENT CHARACTERISTICS;

SEMICONDUCTOR LASERS;

EID: 0035263985     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954147     Document Type: Article

References (4)

1. Fiber coupled diode laser systems up to 2 kW output power
2. Compact high brightness and high power diode laser source for material processing
3. Optimization of GaAsP-QW's for high power diode lasers at 800 nm
4. Design considerations and analytical approximations for high continuous-wave power,broad-waveguide diode lasers