3 W - High brightness tapered diode lasers at 735nm based on tensile strained GaAsP-QWs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4995, Issue , 2003, Pages 29-38

  Erbert, G ^a   Fricke, J ^a   Huelsewede, R ^a   Knauer, A ^a   Pittroff, W ^a   Ressel, P ^a   Sebastian, J ^a   Sumpf, B ^a   Wenzel, H ^a   Traenkle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Beam quality; High power diode lasers; Reliability; Tensile strained quantum wells

Indexed keywords

DIFFRACTION; OPTICAL PUMPING; PHOTODYNAMIC THERAPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRENGTH;

TAPERED DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 0141456359     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.475763     Document Type: Conference Paper

References (15)

1. J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier," Appl. Phys. Lett., vol. 61, pp. 740-742, 1992.
2. D. Mehuy, L .Goldberg, and G. Welch, "5.25 W cw near-diffraction-limited taperd-stripe semiconductor optical amplifier," IEEE Photon. Techn. Lett., vol. 5, pp. 1179-1182, 1993.
3. M. Mikulla, P. Chazan, A. Schmitt, S. Morgott, A. Wetzel, M. Walther, R. Kiefer, W. Pletschen, J. Braunstein, and G. Weimann, "High-brightness tapered semiconductor laser oscillators and amplifiers with low modal gain epilayer structures," IEEE Photon. Techn. Lett., vol. 10, pp. 654-656, 1998
4. W. Koechner, Solid state laser engineering, chap. 5.5, Springer, Berlin, 1996
5. P.L. Tihanyi, F. C. Jain, M. J. Robinson, J. E. Dixon, J. E. Williams, K. Meehan, M. S. O'Neill, L. S. Heath, and D. M. Beyea, "High power AlGaAs-GaAs visible lasers," IEEE Photon. Techn. Lett., vol. 6, pp. 775-777, 1994. R. Singh, D. Bull, F. P. Dabkowski, E. Clausen, and A. K. Chin, "High-power, reliable operation of 730 nm AlGaAs laser diodes," Appl. Phys. Lett., vol. 75, pp. 2002-2004, 1999.
6. P.L. Tihanyi, F. C. Jain, M. J. Robinson, J. E. Dixon, J. E. Williams, K. Meehan, M. S. O'Neill, L. S. Heath, and D. M. Beyea, "High power AlGaAs-GaAs visible lasers," IEEE Photon. Techn. Lett., vol. 6, pp. 775-777, 1994. R. Singh, D. Bull, F. P. Dabkowski, E. Clausen, and A. K. Chin, "High-power, reliable operation of 730 nm AlGaAs laser diodes," Appl. Phys. Lett., vol. 75, pp. 2002-2004, 1999.
7. M. A. Emanuel, J. A. Skimore, M. Jansen, R. Nabiev, "High-power InAlGaAs-GaAs laser diode emitting near 731 nm," IEEE Photon. Techn. Lett., vol. 6, pp. 1283-1285, 1994.
8. A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp.641-643, 1998. A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, and L. J. Mawst, "High-performance, reliable, 730-nm-emitting Al-free active region diode lasers," Appl. Phys. Lett., vol. 73, pp. 2869-2871, 1998. S. Rusli, A. Al-Muhanna, T. Earles, and L. J. Mawst, "1 W cw reliable λ = 730 nm aluminum-free active layer diode laser," Electron. Lett. vol. 36, pp. 630-631, 2000.
9. A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp.641-643, 1998. A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, and L. J. Mawst, "High-performance, reliable, 730-nm-emitting Al-free active region diode lasers," Appl. Phys. Lett., vol. 73, pp. 2869-2871, 1998. S. Rusli, A. Al-Muhanna, T. Earles, and L. J. Mawst, "1 W cw reliable λ = 730 nm aluminum-free active layer diode laser," Electron. Lett. vol. 36, pp. 630-631, 2000.
10. A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp.641-643, 1998. A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, and L. J. Mawst, "High-performance, reliable, 730-nm-emitting Al-free active region diode lasers," Appl. Phys. Lett., vol. 73, pp. 2869-2871, 1998. S. Rusli, A. Al-Muhanna, T. Earles, and L. J. Mawst, "1 W cw reliable λ = 730 nm aluminum-free active layer diode laser," Electron. Lett. vol. 36, pp. 630-631, 2000.
11. B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle, "Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm," IEEE Photon. Techn. Lett., vol. 13, pp. 7-9, 2001.
12. S. Sujecki, L. Borruel, J. Wykes, P. Moreno, B. Sumpf, P. Sewell, H. Wenzel, T.M. Benson, G. Erbert, I. Esquivias, E. C. Larkins, "Non-linear properties of tapered laser cavities", submitted to IEEE J. Select. Top. Quant. Electron., 2003
13. G. Erbert, F. Bugge, A. Knauer, J. Sebastian, A. Thies, H. Wenzel, M. Weyers, and G. Tränkle, "High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm," IEEE J. Select. Top. Quant. Electron., vol. 5, pp. 780-784, 1999
14. W. Pittroff, G. Erbert, G. Beister, F. Bugge, A. Klein, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, and G. Tränkle, "Mounting of High Power Laser Diodes on Boron Nitride Heat Sinks Using an Optimized Au/Sn Metallurgy," IEEE Trans, on Advanced Packaging, vol. 24, pp. 434-441, 2001.
15. B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, G. Tränkle, "2W reliable operation of λ = 735 nm GaAsP/AlGaAs laser diodes," Electron. Lett., vol. 37, pp. 351-353 2001.