메뉴 건너뛰기




Volumn 4995, Issue , 2003, Pages 29-38

3 W - High brightness tapered diode lasers at 735nm based on tensile strained GaAsP-QWs

Author keywords

Beam quality; High power diode lasers; Reliability; Tensile strained quantum wells

Indexed keywords

DIFFRACTION; OPTICAL PUMPING; PHOTODYNAMIC THERAPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TENSILE STRENGTH;

EID: 0141456359     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.475763     Document Type: Conference Paper
Times cited : (14)

References (15)
  • 1
    • 36449008473 scopus 로고
    • High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier
    • J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier," Appl. Phys. Lett., vol. 61, pp. 740-742, 1992.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 740-742
    • Walpole, J.N.1    Kintzer, E.S.2    Chinn, S.R.3    Wang, C.A.4    Missaggia, L.J.5
  • 2
    • 0027681855 scopus 로고
    • 5.25 W cw near-diffraction-limited taperd-stripe semiconductor optical amplifier
    • D. Mehuy, L .Goldberg, and G. Welch, "5.25 W cw near-diffraction-limited taperd-stripe semiconductor optical amplifier," IEEE Photon. Techn. Lett., vol. 5, pp. 1179-1182, 1993.
    • (1993) IEEE Photon. Techn. Lett. , vol.5 , pp. 1179-1182
    • Mehuy, D.1    Goldberg, L.2    Welch, G.3
  • 6
    • 0032606190 scopus 로고    scopus 로고
    • High-power, reliable operation of 730 nm AlGaAs laser diodes
    • P.L. Tihanyi, F. C. Jain, M. J. Robinson, J. E. Dixon, J. E. Williams, K. Meehan, M. S. O'Neill, L. S. Heath, and D. M. Beyea, "High power AlGaAs-GaAs visible lasers," IEEE Photon. Techn. Lett., vol. 6, pp. 775-777, 1994. R. Singh, D. Bull, F. P. Dabkowski, E. Clausen, and A. K. Chin, "High-power, reliable operation of 730 nm AlGaAs laser diodes," Appl. Phys. Lett., vol. 75, pp. 2002-2004, 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 2002-2004
    • Singh, R.1    Bull, D.2    Dabkowski, F.P.3    Clausen, E.4    Chin, A.K.5
  • 8
    • 0032498487 scopus 로고    scopus 로고
    • 730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells
    • A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp.641-643, 1998. A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, and L. J. Mawst, "High-performance, reliable, 730-nm-emitting Al-free active region diode lasers," Appl. Phys. Lett., vol. 73, pp. 2869-2871, 1998. S. Rusli, A. Al-Muhanna, T. Earles, and L. J. Mawst, "1 W cw reliable λ = 730 nm aluminum-free active layer diode laser," Electron. Lett. vol. 36, pp. 630-631, 2000.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 641-643
    • Al-Muhanna, A.1    Wade, J.K.2    Mawst, L.J.3    Fu, R.J.4
  • 9
    • 0032538724 scopus 로고    scopus 로고
    • High-performance, reliable, 730-nm-emitting Al-free active region diode lasers
    • A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp.641-643, 1998. A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, and L. J. Mawst, "High-performance, reliable, 730-nm-emitting Al-free active region diode lasers," Appl. Phys. Lett., vol. 73, pp. 2869-2871, 1998. S. Rusli, A. Al-Muhanna, T. Earles, and L. J. Mawst, "1 W cw reliable λ = 730 nm aluminum-free active layer diode laser," Electron. Lett. vol. 36, pp. 630-631, 2000.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 2869-2871
    • Al-Muhanna, A.1    Wade, J.K.2    Earles, T.3    Lopez, J.4    Mawst, L.J.5
  • 10
    • 0033878404 scopus 로고    scopus 로고
    • 1 W cw reliable λ = 730 nm aluminum-free active layer diode laser
    • A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm-emitting Al-free active region diode lasers with compressively strained InGaAsP quantum wells," Appl. Phys. Lett., vol. 72, pp.641-643, 1998. A. Al-Muhanna, J. K. Wade, T. Earles, J. Lopez, and L. J. Mawst, "High-performance, reliable, 730-nm-emitting Al-free active region diode lasers," Appl. Phys. Lett., vol. 73, pp. 2869-2871, 1998. S. Rusli, A. Al-Muhanna, T. Earles, and L. J. Mawst, "1 W cw reliable λ = 730 nm aluminum-free active layer diode laser," Electron. Lett. vol. 36, pp. 630-631, 2000.
    • (2000) Electron. Lett. , vol.36 , pp. 630-631
    • Rusli, S.1    Al-Muhanna, A.2    Earles, T.3    Mawst, L.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.