2 W reliable operation in 50 μm-wide InGaAsP/InGaP/AlGaAs (λ = 810 nm) SQW diode lasers with tensile-strained InGaP barriers

Electronics Letters

Volumn 37, Issue 21, 2001, Pages 1289-1290

  Yamanaka, F ^a   Wada, M ^a   Kuniyasu, T ^a   Ohgoh, T ^a   Fukunaga, T ^a   Hayakawa, T ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ELECTRIC CURRENTS; HETEROJUNCTIONS; HIGH POWER LASERS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRESS RELAXATION; WAVEGUIDES;

TENSILE STRAINED BARRIERS;

SEMICONDUCTOR LASERS;

EID: 0035846007     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010869     Document Type: Article

References (5)

1. High-power 0.8μm InGaAsP-GaAs SCH SQW lasers
2. Highly reliable operation of high-power InGaAsP/InGaP/AlGaAs 0.8μm separate confinement heterostructure lasers
3. High-continuous wave power 0.8μm band, Al-free active-region diode lasers
4. High-power 0.81μn InGaAsP/InGaP/AlGaAs single quantum well lasers with tensile- strained InGaP barriers
5. Effects of broad-waveguide structure in 0.8μm high-power InGaAsP/InGaP/AlGaAs lasers