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Volumn 393, Issue 1-2, 2007, Pages 285-291

Transport properties of Cd0.8Zn0.2Te crystals

Author keywords

CdZnTe; Crystal growth; Scattering mechanism; Semiconductors; Transport properties

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; HALL MOBILITY; RELAXATION TIME; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; THERMOELECTRIC POWER;

EID: 34047105384     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.01.016     Document Type: Article
Times cited : (3)

References (31)
  • 8
    • 34047123383 scopus 로고    scopus 로고
    • H. Hermon, M. Scheiber, R.B. James, N.N. Kolesnikov, Yu. N. Ivanov, V. Komar, M.S. Goorsky, H. Yoon, J. Toney, T.E. Schlesinger, in: R.B. James, T.E. Schlesinger, P. Siffert, W. Dusi, M. Squillante, M. O'Connell, M. Cuzin (Eds.), vol. 487, Materials Research Society, Pittsburgh, PA, 1998, p. 256.
  • 20
    • 34047160685 scopus 로고    scopus 로고
    • G.A. Gamal, M. Abou Zied, A.A. Ebnalwaled, Detached growth and characterization of CdZnTe crystals, 1st Afro-Asian Conference on Advanced Materials Science and Technology, November 13-16, 2006, Cairo, Egypt, pp. 58-66.
  • 23
    • 34047133500 scopus 로고    scopus 로고
    • 0.22Te crystals, J. Alloys Compd., in press.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.