Photocurrent mapping as a probe of transport properties and electric field distributions in cadmium zinc telluride detectors

IEEE Transactions on Nuclear Science

Volumn 44, Issue 4 PART 2, 1997, Pages 1684-1691

  Toney, J E ^a   Brunett B A ^b   Schlesinger, T E ^a   James, R B ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Cadmium zinc telluride; Material uniformity; Photocurrent mapping; Radiation detectors

Indexed keywords

CADMIUM COMPOUNDS; ELECTRIC FIELDS; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS;

CADMIUM ZINC TELLURIDE DETECTORS; PHOTOCURRENT MAPPING;

RADIATION DETECTORS;

EID: 0031208727     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.604133     Document Type: Article

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