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Crystal Research and Technology

Volumn 37, Issue 6, 2002, Pages 587-594

Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals

(2) Qasrawi, A F a Gasanly, N M b

a ATILIM UNIVERSITY (Turkey)

b MIDDLE EAST TECHNICAL UNIVERSITY (Turkey)

Author keywords

GaS0.5Se0.5 crystals; Hall mobility; Resistivity; Scattering mechanisms

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALS; DEFORMATION; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; HALL EFFECT; IMPURITIES; IONIZATION; LIGHT SCATTERING; THERMAL EFFECTS;

CARRIER SCATTERING MECHANISMS; DONOR IMPURITY LEVEL; ELECTRON EFFECTIVE MASS; HALL MOBILITY MEASUREMENTS; SCATTERING MOBILITY ANALYSIS; SHORT RANGE INTERACTIONS;

GALLIUM COMPOUNDS;

EID: 0036307274 PISSN: 02321300 EISSN: None Source Type: Journal
DOI: 10.1002/1521-4079(200206)37:6<587::AID-CRAT587>3.0.CO;2-Z Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.