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Volumn 174, Issue 1-4, 1997, Pages 256-262
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Growth and characterization of p-type Cd1-xZnxTe (x = 0.2, 0.3, 0.4)
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Author keywords
Cd1 xZnxTe; High pressure vertical Bridgman; Semiconductor radiation detectors
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Indexed keywords
CRYSTAL GROWTH;
ELECTRIC CONDUCTIVITY MEASUREMENT;
INGOTS;
INSULATING MATERIALS;
PHOTOLUMINESCENCE;
RADIATION DETECTORS;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
X RAY CRYSTALLOGRAPHY;
ETCH PIT DENSITY;
HIGH PRESSURE VERTICAL BRIDGMAN METHOD;
PHOTOCURRENT KINETICS;
SEMICONDUCTING CADMIUM COMPOUNDS;
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EID: 0031547418
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)01151-7 Document Type: Article |
Times cited : (34)
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References (7)
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