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Volumn 174, Issue 1-4, 1997, Pages 256-262

Growth and characterization of p-type Cd1-xZnxTe (x = 0.2, 0.3, 0.4)

Author keywords

Cd1 xZnxTe; High pressure vertical Bridgman; Semiconductor radiation detectors

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY MEASUREMENT; INGOTS; INSULATING MATERIALS; PHOTOLUMINESCENCE; RADIATION DETECTORS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

EID: 0031547418     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01151-7     Document Type: Article
Times cited : (34)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.