CaO first-principles electronic properties and MOS device simulation

Journal of Physics D: Applied Physics

Volumn 40, Issue 6, 2007, Pages 1655-1658

  Medeiros, S K ^a   Albuquerque, E L ^a   Maia, F F ^b   De Sousa, J S ^b   Caetano, E W S ^b   Freire, V N ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^b FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GATE DIELECTRICS; MOS DEVICES; POISSON EQUATION; SCHRODINGER EQUATION; THIN FILMS;

CUBIC PHASE; GATE DIELECTRIC MATERIALS;

LIME;

EID: 33947698869     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/6/012     Document Type: Article

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