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Applied Physics Letters

Volumn 86, Issue 24, 2005, Pages 1-3

Gate inversion effect in Si1-x Gex/Hf O 2/Si metal-oxide-semiconductor devices

(6) Costa e Silva, J a De Oliveira, E L a De Sousa, J S a Freire, J A K a Freire, V N a Farias, G A a

a FEDERAL UNIVERSITY OF CEARÁ (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DIELECTRIC FILMS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); GERMANIUM COMPOUNDS; HAFNIUM COMPOUNDS; MOS DEVICES; PERMITTIVITY; POISSON EQUATION; POLYCRYSTALLINE MATERIALS;

GATE INVERSION; GATE TUNNELING; POLYCRYSTALLINE GATES; ULTRATHIN OXIDE LAYERS;

SILICON COMPOUNDS;

EID: 21344475126 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1946919 Document Type: Article

Times cited : (2)

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