Nonvolatile silicon memory at the nanoscale

MRS Bulletin

Volumn 29, Issue 11, 2004, Pages

  Silva, Helena ^c   Kim, Moon Kyung ^b   Avci, Uygar ^a   Kumar, Arvind ^a   Tiwari, Sandip ^c,d  

^a Department of Obstetrics Gynecology   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Cornell NanoScale Facility ^*

^d Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility   (United States)

Author keywords

Nanoscale memory; Nonvolatile silicon memory; Silicon technology; Single electron effects

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; LOGIC GATES; SEMICONDUCTING SILICON; TRANSISTORS;

NANOSCALE MEMORY; NONVOLATILE SILICON MEMORY; SINGLE-ELECTRON EFFECTS;

NONVOLATILE STORAGE;

EID: 19744381726     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2004.239     Document Type: Review

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