Deep level defects which limit current gain in 4H SiC bipolar junction transistors

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Cochrane, C J ^a   Lenahan, P M ^a   Lelis, A J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; PARAMAGNETIC RESONANCE; SILICON CARBIDE;

DEEP LEVEL DEFECTS; HIGH SYMMETRY; RECOMBINATION DEFECTS; SPIN DEPENDENT RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 33947590090     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2714285     Document Type: Article

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