Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates

Journal of Physics Condensed Matter

Volumn 19, Issue 9, 2007, Pages

  Hsu, H P ^a   Wu, P Y ^a   Huang, Y S ^a   Sanorpim, S ^b   Tiong, K K ^c   Katayama, R ^d   Onabe, K ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b CHULALONGKORN UNIVERSITY   (Thailand)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOSE-EINSTEIN CONDENSATION; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

BAND GAP ENERGIES; PHOTOVOLTAGE SPECTROSCOPY; QUADRATIC CORRECTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33947579314     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/9/096009     Document Type: Article

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