The structural and optical characterization of a new class of dilute nitride compound semiconductors: GaInNP

Journal of Physics Condensed Matter

Volumn 16, Issue 31, 2004, Pages

  Hsu, H P ^a   Huang, Y S ^a   Wu, C H ^b   Su, Y K ^b   Juang, F S ^c   Hong, Y G ^d   Tu, C W ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CALIBRATION; HEAT CONDUCTION; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRAIN; SUPERLATTICES;

DILUTE NITRIDES; ELECTROREFLECTANCE (ER); NITROGEN INCORPORATION; PIEZOREFLECTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4043104029     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/31/018     Document Type: Article

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