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Volumn 298, Issue SPEC. ISS, 2007, Pages 531-535
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Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE
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Author keywords
A1. Photoluminescence (PL); A1. Photoluminescence excitation (PLE); A3. MOVPE; A3. Single quantum wells; B1. III P nitrides; B2. InGaPN alloy
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Indexed keywords
GALLIUM COMPOUNDS;
INDIUM ALLOYS;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
QUANTUM THEORY;
THERMAL EFFECTS;
III-P-NITRIDES;
INGAPN ALLOY;
PHOTOLUMINESCENCE EXCITATION (PLE);
SINGLE QUANTUM WELLS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 33846494283
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.221 Document Type: Article |
Times cited : (6)
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References (13)
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