Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 7561-7566

  McGill, L ^a   Wu, J W ^a   Fitzgerald, E A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP SEMICONDUCTORS; DISLOCATION DENSITY; NONIDEAL DOPING; QUANTUM WELL COMPOSITION;

ELECTRON DIFFRACTION; ENERGY GAP; ERROR ANALYSIS; INDIUM COMPOUNDS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

LIGHT EMITTING DIODES;

EID: 3142613933     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1736330     Document Type: Article

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