Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 574-578

  Biwa, Goshi ^a,c   Yaguchi, Hiroyuki ^a   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c SONY CORPORATION   (Japan)

Author keywords

GaPAsN; Metalorganic vapor phase epitaxy (MOVPE); Multiple quantum well (MQW); Nitride alloy; Photoluminescence (PL); Photoluminescence excitation spectroscopy (PLE)

Indexed keywords

CRYSTAL LATTICES; EXCITONS; HIGH TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

NITRIDE ALLOY; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY (PLE);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032477147     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00734-9     Document Type: Article

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