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Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 410-412

The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance

(2) Zvanut, M E a Konovalov, V V a

a UNIVERSITY OF ALABAMA AT BIRMINGHAM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND-EDGES; DEFECT LEVELS; HIGH PURITY; INCIDENT PHOTON ENERGY; INTRINSIC DEFECTS; MODEL-BASED OPC; NITROGEN DONORS; PARAMAGNETIC DEFECTS; PHOTOINDUCED ELECTRONS; SEMI-INSULATING;

BORON; BORON COMPOUNDS; CHARGE TRANSFER; DEFECTS; ELECTRON RESONANCE; PARAMAGNETIC MATERIALS; PARAMAGNETISM; SILICON CARBIDE;

PARAMAGNETIC RESONANCE;

EID: 79956048864 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1432444 Document Type: Article

Times cited : (67)

References (12)

1
- 36549092940
- apl APPLAB 0003-6951
- J. Schneider, H. D. Muller, K. Maier, W. Wilkening, F. Fuchs, A. Dörnen, S. Leibenzeder, and R. Stein, Appl. Phys. Lett. 56, 1184 (1990). apl APPLAB 0003-6951
- (1990) Appl. Phys. Lett. , vol.56 , pp. 1184
- Schneider, J.¹ Muller, H.D.² Maier, K.³ Wilkening, W.⁴ Fuchs, F.⁵ Dörnen, A.⁶ Leibenzeder, S.⁷ Stein, R.⁸

2
- 36449005454
- apl APPLAB 0003-6951
- H. McD. Hobgood, R. C. Glass, A. Augustine, R. H. Hopkins, J. R. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. 66, 1364 (1995). apl APPLAB 0003-6951
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1364
- Hobgood, H.McD.¹ Glass, R.C.² Augustine, A.³ Hopkins, R.H.⁴ Jenny, J.R.⁵ Skowronski, M.⁶ Mitchel, W.C.⁷ Roth, M.⁸

3
- 0027575905
- phb PHYBE3 0921-4526
- J. Schneider and K. Maier, Physica B 185, 199 (1993). phb PHYBE3 0921-4526
- (1993) Physica B , vol.185 , pp. 199
- Schneider, J.¹ Maier, K.²

4
- 18144444695
- ddf DDAFE7 1012-0386
- P. G. Baranov, Defect Diffus. Forum 148-149, 129 (1997). ddf DDAFE7 1012-0386
- (1997) Defect Diffus. Forum , vol.148-149 , pp. 129
- Baranov, P.G.¹

5
- 0032256806
- psb PSSBBD 0370-1972
- S. Greulich-Weber, Phys. Status Solidi 210, 415 (1998). psb PSSBBD 0370-1972
- (1998) Phys. Status Solidi , vol.210 , pp. 415
- Greulich-Weber, S.¹

6
- 0033075954
- sem SMICES 1063-7826
- A. A. Lebedev, Semiconductors 33, 107 (1999). sem SMICES 1063-7826
- (1999) Semiconductors , vol.33 , pp. 107
- Lebedev, A.A.¹

7
- 0342607968
- 8tw PHSTER 0281-1847
- T. N. Son, W. M. Chen, J. L. Lindström, B. Monemar, and E. Janzen, Phys. Scr., T 79, 46 (1999). 8tw PHSTER 0281-1847
- (1999) Phys. Scr., T , vol.79 , pp. 46
- Son, T.N.¹ Chen, W.M.² Lindström, J.L.³ Monemar, B.⁴ Janzen, E.⁵

8
- 0000231842
- prb PRBMDO 0163-1829
- E. Sörman, T. N. Son, W. M. Chen, O. Kordina, C. Hallin, and E. Janzen, Phys. Rev. B 61, 2613 (2000). prb PRBMDO 0163-1829
- (2000) Phys. Rev. B , vol.61 , pp. 2613
- Sörman, E.¹ Son, T.N.² Chen, W.M.³ Kordina, O.⁴ Hallin, C.⁵ Janzen, E.⁶

9
- 14344284767
- Trans Tech Publications, Switzerland
- V. Ya. Bratus et al., Materials Science Forum, Trans Tech Publications, Switzerland, Vols. 353-356, p. 517 (2001).
- (2001) Materials Science Forum , vol.353-356 , pp. 517
- Ya. Bratus, V.¹

10
- 0034888268
- prb PRBMDO 0163-1829
- N. T. Son, P. N. Hai, and E. Janzen, Phys. Rev. B 63, 201201 (2001). prb PRBMDO 0163-1829
- (2001) Phys. Rev. B , vol.63 , pp. 201201
- Son, N.T.¹ Hai, P.N.² Janzen, E.³

11
- 0033190182
- mie MIENEF 0167-9317
- P. J. Macfarlane and W. E. Zvanut, Microelectron. Eng. 48, 269 (1999). mie MIENEF 0167-9317
- (1999) Microelectron. Eng. , vol.48 , pp. 269
- MacFarlane, P.J.¹ Zvanut, W.E.²

12
- 0029770343
- jaJAPIAU 0021-8979
- A. O. Evwaraye, S. R. Smith, and W. C. Mitchel, J. Appl. Phys. 79, 253 (1996). jap JAPIAU 0021-8979
- (1996) J. Appl. Phys. , vol.79 , pp. 253
- Evwaraye, A.O.¹ Smith, S.R.² Mitchel, W.C.³

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