Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing

Materials Research Bulletin

Volumn 42, Issue 5, 2007, Pages 975-981

  Simoes A Z ^a   Cruz, M P ^b,c,d   Ries, A ^a   Longo, E ^a   Varela, J A ^a   Ramesh, R ^c,d  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^c University of California Berkeley   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A. Thin films; B. Chemical synthesis; D. Ferroelectricity

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; ELECTROCHEMICAL ELECTRODES; FERROELECTRICITY; FILM GROWTH; PIEZOELECTRIC MATERIALS; SYNTHESIS (CHEMICAL);

FERROELECTRIC PROPERTIES; PIEZOELECTRIC PROPERTIES; PIEZORESPONSE FORCE MICROSCOPY (PFM); POLYMERIC PRECURSOR METHOD;

THIN FILMS;

EID: 33947289059     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2006.08.006     Document Type: Article

References (22)

1. Chu M., Ganne M., Caldes M.T., Gautier E., and Brohan L. Phys. Rev. B 68 (2003) 014102
2. Cummins S.E., and Cross L.E. J. Appl. Phys. 39 (1968) 2268-2274
3. Lee H.N., Hesse D., Zahharov N., and Gosele U. Science 296 (2003) 2006-2009
4. Matsuda H., Ito S., and Iijima T. Appl. Phys. Lett. 83 (2003) 5023-5025
5. Lee J.K., Kim C.H., Suh H.S., and Hong K.S. Appl. Phys. Lett. 80 (2002) 3593-3595
6. Kim K., and Kim C. Surf. Coat. Technol. 177 (2004) 770-773
7. Bao D.H., Yao X., Wakiya N., Shinozaki K., and Mizutani N. J. Phys. D 36 (2003) 1217-1221
8. Ramesh R., Gilchrist H., Sands T., Keramidas V.G., Haakenaasen R., and Fork D.K. Appl. Phys. Lett. 63 (1993) 3592-3594
9. Ramesh R., and Schlom D.G. Science 296 (2002) 1975-1976
10. Vasconcelos N.S.L.S., Vasconcelos J.S., Bouquet V., Guilloux-Viry M., Bernardi M.I., and Varela J.A. Thin Solid Films 436 (2003) 213-219
11. Simões A.Z., Stojanovic B.D., Tangastev A., Setter N., and Varela J.A. Integrated Ferroelectrics 43 (2002) 123-135
12. Simões A.Z., Ries A., Filho F.M., Varela J.A., and Longo E. Appl. Phys. Lett. 85 (2004) 5962-5964
13. Gruverman A., Auciello O., and Tokumoto H. Annu. Rev. Mater. Sci. 28 (1998) 101-123
14. Sun Y.M., Chen Y.C., Gan J.Y., and Hwang J.C. Jpn. J. Appl. Phys. (Part 2) 41 (2002) L892-L894
15. Takei W.J., Formigoni N.P., and Francombe M.H. Appl. Phys. Lett. 15 (1969) 256-258
16. Zanetti S.M., Vasconcelos J.S., Vasconcelos N.S.L.S., Leite E.R., Longo E., and Varela J.A. Thin Solid Films 466 (2004) 62-68
17. Al-Shareef H.N., Dimos D., Warren W.L., Tuttle B.A., Voigt J.A., and Nasby R.D. J. Appl. Phys. 79 (1996) 1013-1016
18. Pontes F.M., Leite E.R., Longo E., Varela J.A., and Eiras J.A. Appl. Phys. Lett. 76 (2000) 2433-2435
19. Robels U., Calderwood J.H., and Arlt G. J. Appl. Phys. 77 (1995) 4002-4008
20. Kholkin A.L., Brooks K.G., and Setter N. Appl. Phys. Lett. 71 (1997) 2044-2046
21. Muralt P. IEEE Trans. Ultrason. Ferroelectr. Freq. Control. 47 (2000) 903-915
22. Kholkine L., Wuetchrich C., Taylor D.V., and Setter N. Rev. Sci. Instrum. 67 (1996) 1935-1941