The effect of dimensional scaling on the erase characteristics of NOR flash memory

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 245-247

  Lee, Wook H ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Coupling ratio; Flash memory; Fowler Nordheim tunneling; Parasitic capacitance

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON TUNNELING; GATES (TRANSISTOR); LOGIC DEVICES; THRESHOLD VOLTAGE;

FLOATING GATE; FOWLER-NORDHEIM TUNNELING; NOR FLASH MEMORY; PARASITIC CAPACITANCE;

FLASH MEMORY;

EID: 0037766765     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.810882     Document Type: Letter

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