A 90nm generation NOR Flash Multilevel Cell (MLC) with 0.044μm 2/bit Cell Size

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 35-36

  Sim, Sang Pil ^a   Kwon, Wook Hyun ^a   Lee, Chang Hyun ^a   Han, Jung In ^a   Lee, Wook H ^a   Jung, Cheol ^a   Lee, Heon Kyu ^a   Jang, Young Kwan ^a   Park, Se Woong ^a   Park, Jeung Hwan ^a   Park, Chan Kwang ^a   Kim, Kyung Tae ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; ELECTRIC CHARGE; FLASH MEMORY;

CELL DISPERSION; MULTILEVEL CELLS (MLC);

VLSI CIRCUITS;

EID: 27144515309     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. S. N. Keeney, IEDM 2001, pp. 41-44.
2. C. K. Park, VLSI 2004, pp. 238-239.