Highly Manufacturable 90nm NOR Flash Technology with 0.081 μm 2 Cell Size

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 91-92

  Song, Yunheub ^a   Lee, Sangeun ^a   Kim, Taeyong ^a   Han, Jungin ^a   Lee, Hungyu ^a   Kim, Sunyoung ^a   Park, Junghwan ^a   Park, Sewoong ^a   Choi, Joonhuk ^a   Kim, Jaewoo ^a   Lee, Daeyup ^a   Cho, Myoungkwan ^a   Park, Kyucharn ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LITHOGRAPHY; NITROGEN OXIDES; OXIDATION; CYTOLOGY;

FLASH TECHNOLOGY;

FLASH MEMORY; CELLS;

CELL-SIZE; CODE STORAGE; DIELECTRIC THIN FILMS; FLASH TECHNOLOGY; ILLUMINATION SYSTEM; LOW VOLTAGE OPERATION; NOR FLASH; OFF-AXIS ILLUMINATION; SCALINGS; SMALL CELLS;

EID: 0141761544     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Y.H. Song, et al., IEDM Tech. Dig., pp37-40, 2001.
2. D.C. Kim et al., IEDM Tech. Dig., pp919-922, 2002.