Reliable extraction of cycling induced interface states implementing realistic p/e stresses in reference cell: Comparison with flash memory cell

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 169-171

  Baek, Chang Ki ^a   Kim, Bomsoo ^b   Son, Younghwan ^b   Kwon, Wookhyun ^c   Park, Chan Kwang ^c   Park, Young June ^a   Min, Hong Shick ^a   Kim, Dae M ^b  

^a Seoul National University   (South Korea)

^b Korea Institute for Advanced Study   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Charge pumping; Flash EEPROM cell; Interface states

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; THERMAL CYCLING; THERMAL STRESS;

FLASH EEPROM CELL; FLASH MEMORY CELL; FLOATING-GATE EEPROM CELLS; INTERFACE STATES; REFERENCE CELL;

FLASH MEMORY;

EID: 33644632142     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.864178     Document Type: Article

References (6)

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