Novel organosiloxane vapor annealing process for improving properties of porous low-k films

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 5019-5024

  Kohmura, K ^a   Tanaka, H ^a   Oike, S ^a   Murakami, M ^a   Fujii, N ^a   Takada, S ^b   Ono, T ^a   Seino, Y ^b   Kikkawa, T ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Dielectric properties; Mechanical properties; Porous silica film; Silylation

Indexed keywords

CHEMICAL BONDS; ETCHING; MOLECULAR DYNAMICS; PERMITTIVITY; POROUS SILICON; SILICON COMPOUNDS;

ASHING; PLASMA DAMAGES; POROUS SILICA FILMS; SILYLATION;

THIN FILMS;

EID: 33947140881     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.054     Document Type: Article

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