Impacts of UV Cure for reliable porous PECVD SiOC integration

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 220-222

  Yoneda, K ^a   Kato, M ^a   Kondo, S ^a   Kobayashi, N ^a   Matsuki, N ^b   Matsushita, K ^b   Ohara, N ^b   Fukazawa, A ^b   Kimura, T ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b ASM Japan KK   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BONDS; DOPING (ADDITIVES); INTERCONNECTION NETWORKS; POROUS SILICON; RELIABILITY; SILICON CARBIDE;

FILM MODULUS; OXIDE FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 28244449804     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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