Planar SiC Schottky diodes for MMIC applications

Conference Proceedings- European Microwave Conference

Volumn 1, Issue , 2004, Pages 153-156

  Südow, Mattias ^a   Rorsman, Niklas ^a   Nilsson, Per Åke ^a   Zirath, Herbert ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; ELECTRIC BREAKDOWN; INTERMODULATION; MICROWAVES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE;

OVERLOAD COMPLIANCE; PLANAR SCHOTTKY DIODES; SEMI-INSULATING SUBSTRATES; SERIES RESISTANCE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 18844451806     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Z. Joakim Erikssson, Niklas Rorsman, "4h-silicon carbide schottky barrier diodes for microwave applications," IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 3, March 2003.
2. F. F. Z. H. Eriksson J., Rorsman N., "Design and characterization of a singly balanced silicon carbide schottky diode high-level mixer," Electronic Letters, vol. 371, no. 1, pp. 54-55, January 2001.
3. J. Eriksson, "Silicon carbide microwave devices," Ph.D. dissertation, Chalmers University of Technology, Kemivägen 9, SE 412 96 Göteborg, SWEDEN, 2002. [Online]. Available: www.chalmers.se
4. C. D. C. B. M. B. V. A.-F. F. M. Dominique Defives, Oliver Noblanc, "Barrier inhomogenities and electrical characteristics of ti/4h-sic schottky rectifiers," IEEE Transactions on Electron Devices, vol. 46, no. 3, March 2003.