Resistive SiC-MESFET mixer

IEEE Microwave and Wireless Components Letters

Volumn 12, Issue 4, 2002, Pages 119-121

  Andersson, Kristoffer ^b   Eriksson, Joakim ^b   Rorsman, Niklas ^b   Zirath, Herbert ^a,b  

^a IEEE

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

High level mixer; Intermodulation distortion; Intermodulation intercept point; Resistive mixer; S band; Silicon carbide; Wide bandgap semiconductors

Indexed keywords

BANDPASS FILTERS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ENERGY GAP; FREQUENCY CONVERTERS; FREQUENCY MODULATION; MIXER CIRCUITS; SILICON CARBIDE;

INTERMODULATION DISTORTION;

MESFET DEVICES;

EID: 0036540858     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.993287     Document Type: Article

References (5)

1. Wide bandgap semiconductor transistors for microwave power amplifiers
2. Design and characterization of singly balanced silicon carbide Schottky diode high-level mixer
3. Wide dynamic range RF mixers using wide-bandgap semiconductors
4. A new method for determining the fet small-signal equivalent circuit
5. A GaAs MESFET mixer with very low intermodulation