Behavior of Si and C atoms in ion amorphized SiC

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Jiang, W ^a   Zhang, Y ^a   Engelhard, M H ^a   Weber, W J ^a   Exarhos, G J ^a   Lian, J ^b   Ewing, R C ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; MASS TRANSFER; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BONDING; ENERGY ELASTIC RECOIL DETECTION ANALYSIS; PHASE SEGREGATION;

SILICON CARBIDE;

EID: 33847742165     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431941     Document Type: Article

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