Thermal and dynamic responses of Ag implants in silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 642-646

  Jiang, W ^a   Weber, W J ^a   Shutthanandan, V ^a   Li, L ^a   Thevuthasan, S ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Channeling; Implantation defects; Implants diffusion; Rutherford backscattering spectroscopy; SiC

Indexed keywords

AMORPHIZATION; ANNEALING; CRACKS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DIFFUSION; EPITAXIAL GROWTH; GOLD; INTERFACES (MATERIALS); ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CHANNELING; IMPLANTATION DEFECTS; IMPLANTS DIFFUSION; SIC;

SILICON CARBIDE;

EID: 2342580750     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.134     Document Type: Conference Paper

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